Related papers: p-Diamond, Si, GaN and InGaAs TeraFETs
Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer…
Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is…
Recent years have seen an explosive research and development of nanoplasmonics in the visible and near-infrared (near-ir) frequency regions. One of the most fundamental effects in nanoplasmonics is nano-concentration of optical energy.…
Most periodic terahertz (THz) structures need a substrate to support; thus, additional absorption occurs, resulting in a low quality (Q) factor. Free-standing structures that do not require any holder or substrate show high levels of…
Gas sensors based on transition metal dichalcogenides (TMDCs) have attracted much attention from a new perspective involving light-assisted or gate-voltage operation. However, their combined roles as regards the gas sensing performance and…
Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly developing areas of quantum communication, short wavelength optics, smart energy conversion and biomedical interfaces. These strongly…
Compact and low-loss photonic crystal waveguides are critical in integrated terahertz (THz) applications. Compared with pure metal or dielectric photonic crystal waveguides, hybrid (metal-dielectric) integrated waveguides provide a simple…
For practical superconducting quantum processors, orders of magnitude improvement in coherence is required, motivating efforts to optimize hardware design and explore new materials. Among the latter, the coherence of superconducting…
We present high-performance terahertz (THz) metal-mesh bandpass filters developed to mitigate direct detection effects in sensitive THz receivers based on superconducting hot-electron bolometer (HEB) mixers. These metal-mesh filters are…
The transport properties of high-performance thin-film transistors (TFT) made with a regio-regular poly(thiophene) semiconductor (PQT-12) are reported. The room-temperature field-effect mobility of the devices varied between 0.004 cm2/V s…
We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the…
Solid-state nanopore gating inspired by biological ion channels is gaining increasing traction due to a large range of applications in biosensing and drug delivery. Integration of stimuli-responsive molecules such as…
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…
GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…
Spectacular advances in heterodyne astronomy with both the Herschel Space Observatory and Stratospheric Observatory for Far Infrared Astronomy (SOFIA) have been largely due to breakthroughs in detector technology. In order to exploit the…
The Transition Edge Sensor is extremely sensitive to the change of temperature, combined with the high-Z metal of a certain thickness, it can realize the high energy resolution measurement of particles such as X-rays. X-rays with energies…
We report on noise and thermal conductance measurements taken in order to determine an upper bound on the performance of graphene as a terahertz photon detector. The main mechanism for sensitive terahertz detection in graphene is bolometric…
Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device…
Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for…
We propose and discuss terahertz electro-absorption modulators based on graphene plasmonic structures. The active device consists of a self-gated pair of graphene layers, which are patterned to structures supporting THz plasmonic…