Related papers: p-Diamond, Si, GaN and InGaAs TeraFETs
Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable…
To efficiently integrate cutting-edge terahertz technology into compact devices, the highly confined terahertz plasmons are attracting intensive attentions. Compared to plasmons at visible frequencies in metals, terahertz plasmons,…
We developed a hydrodynamic model of plasmonic crystals formed in the current-driven grating gate transistor structures. The model demonstrates that the quality factor of plasmonic resonances could be increased by using ungated regions with…
We show that a periodic multi-grated-gate structure can be applied to THz plasmonic FETs (TeraFETs) to improve the THz detection sensitivity. The introduction of spatial non-uniformity by separated gate sections creates regions with…
The plasma oscillations in high-mobility field-effect transistors (HEMTs) have emerged as a key physical mechanism for manipulating electromagnetic radiation in the sub-terahertz (sub-THz) and THz frequency ranges. These collective electron…
We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase…
In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated an outstanding potential for Terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz…
The p-type surface conductivity of H-terminated diamond (HD, H-diamond) has created new path ways for developing diamond based electronic devices as well as chemical and bio-sensors. However, the hydrophobic nature of the HD surface can…
Dynamics of plasmons in nanoribbons of (hydrogen intercalated) quasi-free-standing single layer graphene is studied by terahertz spectroscopy both in the steady state and upon photoexcitation by an ultrashort near infrared laser pulse. The…
Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range.…
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…
This letter presents the bulk diamond field-effect transistor (FET) with the highest current value reported at this moment. The goal was to drastically increase the current of this type of device by increasing the total gate width thanks to…
We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FET) in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime.…
Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex…
Transistor structures comprising graphene and sub-wavelength metal gratings hold a great promise for plasmon-enhanced terahertz detection. Despite considerable theoretical effort, little experimental evidence for terahertz plasmons in such…
Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10~THz) that can operate at room temperature. We conducted experimental characterizations of a…
Plasmonic detectors have the potential to provide a method of rapid spectroscopy without the need of moving mirrors or gratings. Previous measurements have demonstrated frequency tunable detection based on plasmonic excitations, however…
Tunable terahertz plasmons are essential for reconfigurable photonics, which have been demonstrated in graphene through gating, though with relatively weak responses. Here, we demonstrate strong terahertz plasmons in graphite thin films via…
We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear…
The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is…