4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot

Sinan Bugu; Shimpei Nishiyama; Kimihiko Kato; Yongxun Liu; Shigenori Murakami; Takahiro Mori; Thierry Ferrus; Tetsuo Kodera

doi:10.1038/s41598-021-99560-x

4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot

Mesoscale and Nanoscale Physics 2021-11-10 v4 Quantum Physics

Authors: Sinan Bugu , Shimpei Nishiyama , Kimihiko Kato , Yongxun Liu , Shigenori Murakami , Takahiro Mori , Thierry Ferrus , Tetsuo Kodera

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Abstract

We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2\,K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi-qubit platforms.

Keywords

rf reflectometry silicon quantum dot p-channel gaas varactor coulomb diamond liquid helium temperature multi-gate architecture

Cite

@article{arxiv.2105.04832,
  title  = {4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot},
  author = {Sinan Bugu and Shimpei Nishiyama and Kimihiko Kato and Yongxun Liu and Shigenori Murakami and Takahiro Mori and Thierry Ferrus and Tetsuo Kodera},
  journal= {arXiv preprint arXiv:2105.04832},
  year   = {2021}
}

4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot

Abstract

Keywords

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