Related papers: Bidirectional switching assisted by interlayer exc…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur…
We study the non-collinear exchange coupling across a trilayer magnetic junction consisting of two ferromagnets separated by a thin dilute magnetic semiconductor containing itinerant carriers with finite spin relaxation. It is remarkable…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
We study the Josephson effect through a magnetic molecule with anisotropic properties. Performing calculations in the tunneling regime, we show that the exchange coupling between the electron spin on the molecule and the molecular spin can…
We have investigated the effect of thermal fluctuation on the interlayer coupling of three-dimensional Josephson-junction arrays with anisotropic interactions as a model of layered high-$T_c$ oxides, focusing on non-Ohmic current-voltage…
Voltage control of magnetic anisotropy (VCMA) induced by charge accumulation is typically considered as an ultrafast process, enabling energy-efficient and high-speed magnetization switching in spintronic devices. In this work, we…
Magnetization relaxation of exchange biased (Pt/Co)5/Pt/IrMn multilayers with perpendicular anisotropy was investigated by time-resolved Kerr microscopy. Magnetization reversal occurs by nucleation and domain wall propagation for both…
Exerting control of the magnetic exchange interaction in heterostructures is of both basic interest and has potential for use in spin-based applications relying on quantum effects. We here show that the sign of the exchange interaction in a…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
Interfacial engineering enables various emergent effects such as spin reorientations and transport anisotropy. Noncollinear spin textures are essential for realizing many emergent quantum transport phenomena. However, driving such spin…
Thermoelectric transport across normal-metal/helical-multiferroic/ferromagnetic heterojunctions is theoretically investigated. We find a anisotropic charge and spin thermopower with a $C_{2v}$ symmetry. The angular dependence on the…
Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form…
Using the spin-spiral formulation of the tight-binding linear muffin-tin orbital method, the principal components of the exchange stiffness tensor are calculated for typical hard magnets including tetragonal CoPt-type and hexagonal YCo5…
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of…
The thermal spin-transfer torque (TSTT) is an effect to switch the magnetic free layer in a magnetic tunnel junction by a temperature gradient only. We present ab initio calculations of the TSTT. In particular, we discuss the influence of…
Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we…
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…
We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…
Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque…
It is shown, that the monotonic part of interlayer electronic conductivity strongly decreases in high magnetic field perpendicular to the conducting layers. We consider only the coherent interlayer tunnelling, and the obtained result…