Related papers: Bidirectional switching assisted by interlayer exc…
Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…
We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of…
Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in…
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike…
Experiments have shown that the tunneling current in a Co/Al$_2$O$_3$ magnetic tunneling junction (MTJ) is positively spin polarized, opposite to what is intuitively expected from standard tunneling theory which gives the spin polarization…
We investigate the dynamics of a magnetic system consisting of two magnetic moments coupled by either exchange, dipole-dipole, or Dzyalozhinski-Moriya interaction. We compare the switching mechanisms and switching rates as induced by the…
The properties of quantum systems interacting with their environment, commonly called open quantum systems, can be strongly affected by this interaction. While this can lead to unwanted consequences, such as causing decoherence in qubits…
Magnetic systems exhibiting exchange bias effect are being considered as materials for applications in data storage devices, sensors and biomedicine. As the size of new mag- netic devices is being continuously reduced, the influence of…
We show that pure spin injection from a magnetic electrode into an inversion symmetry-broken system composed of a tunnel barrier and a metallic region generates a transverse charge current. Such a tunnelling spin galvanic conversion is…
We explore the three-particle spin model of an $S_{1}=\frac{1}{2}$ particle (e.g. a stationary electron) interacting with two spin-coupled $S_{\text{2,3}}$ particles with exchange coupling and magnetic anisotropy. We find that in the case…
Superparamagnetic tunnel junctions (SMTJs) are promising sources for the randomness required by some compact and energy-efficient computing schemes. Coupling SMTJs gives rise to collective behavior that could be useful for cognitive…
A modified effective field model was developed to quantitatively interpret the angular dependent magnetization reversal processes in exchange biased Fe/IrMn bilayers. Several kinds of multi-step loops with distinct magnetization reversal…
Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous…
By means of the nonequilibrium Green function technique, the effect of spin-flip scatterings on the spin-dependent electrical transport in ferromagnet-insulator-ferromagnet (FM-I-FM) tunnel junctions is investigated. It is shown that…
We report a study of interlayer exchange interaction in multilayer CoPt/Co structures consisting of periodic CoPt multilayer film with an "easy axis" anisotropy and thick Co layer with an "easy plane" anisotropy separated by Pt spacer with…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20…
The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced…
Heisenberg exchange coupling (HC) and biquadratic exchange coupling (BQC) are known to occur in magnetic tunnel junctions (MTJ) and nanoscale spintronics structures. MTJ-based molecular spintronics devices (MTJMSD) provide a platform to…