Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

S. Geiskopf; J. Igarashi; G. Malinowski; J. -X. Lin; J. Gorchon; S. Mangin; J. Hohlfeld; D. Lacour; M. Hehn

Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

Materials Science 2024-12-23 v1 Mesoscale and Nanoscale Physics

Authors: S. Geiskopf , J. Igarashi , G. Malinowski , J. -X. Lin , J. Gorchon , S. Mangin , J. Hohlfeld , D. Lacour , M. Hehn

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Abstract

Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20 with a 10nm thick Co85Gd15 layer monitored by measuring the Tunnel magneto resistance of the device. The use of in plane magnetized electrodes relaxes the constrains linked to perpendicular magnetic anisotropy systems while achieving a tunneling magnetoresistance (TMR) ratio exceeding 100%. The influence of the upper electrical electrode, which is opaque to the laser beam in this study, is also discussed.

Keywords

all-optical switching magnetic tunnel junction helicity-independent tunnel magnetoresistance Co40Fe40B20

Cite

@article{arxiv.2412.16005,
  title  = {Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction},
  author = {S. Geiskopf and J. Igarashi and G. Malinowski and J. -X. Lin and J. Gorchon and S. Mangin and J. Hohlfeld and D. Lacour and M. Hehn},
  journal= {arXiv preprint arXiv:2412.16005},
  year   = {2024}
}

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11 pages, 4 figures

Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

Abstract

Keywords

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