Related papers: Bidirectional switching assisted by interlayer exc…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically…
We investigate the spin-transfer torque in a magnetic multilayer structure by means of a spin-diffusion model. The torque in the considered system, consisting of two magnetic layers separated by a conducting layer, is caused by a…
The effects of spin-orbit coupling on the two-electron spectra in lateral coupled quantum dots are investigated analytically and numerically. It is demonstrated that in the absence of magnetic field the exchange interaction is practically…
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the…
We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced…
We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and…
This paper investigates the relationship among interlayer exchange coupling (IEC), Dzyaloshinskii-Moriya interaction (DMI), and multilevel magnetization switching within a Co/Pt/Co heterostructure, where varying Pt thicknesses enable…
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium…
By integrating the local voltage-controlled magnetic anisotropy (VCMA) effect, Dzyaloshinskii-Moriya interaction (DMI) effect, and spin-orbit torque (SOT) effect, we propose a novel device structure for field-free magnetic tunnel junction…
Direction-dependent anisotropic exchange is a common feature of magnetic systems with strong spin-orbit coupling. Here we study the effect of such exchange upon macroscopic magnetic anisotropy for a face-centered-cubic model. By several…
We investigate theoretically the magnetic dynamics in a ferroelectric/ferromagnetic heterostructure coupled via strain-mediated magnetoelectric interaction. We predict an electric field-induced magnetic switching in the plane perpendicular…
We theoretically study the equilibrium and dynamic properties of nanoscale magnetic tunnel junctions (MTJs) and magnetic wires, in which an electric field controls the magnetic anisotropy through spin-orbit coupling. By performing…
The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized…
The exchange bias at ferromagnetic/antiferromagnetic interfaces strongly depends upon the state of antiferromagnetic (AF) layer which, due to strong magnetoelastic coupling, is sensitive to mechanical stresses. In the present paper we…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…
Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…