Related papers: Bidirectional switching assisted by interlayer exc…
Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that, in the high damping regime, the threshold switching current is independent of the damping…
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However,…
The magnetic reversal by spin-polarized current of a magnetic junction consisting of two ferromagnetic layers and a nonmagnetic spacer in between is considered. Initially, the free layer is magnetized antiparallel to the pinned layer by an…
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel…
Long-range and anisotropic dipolar interactions profoundly modify the dynamics of particles hopping in a periodic lattice potential. We report the realization of a generalized t-J model with dipolar interactions using a system of ultracold…
Interfacing a ferromagnet with a polarized ferroelectric gate generates a non-uniform, interfacial spin density coupled to the ferroelectric polarization allowing so for an electric field control of effective transversal field to…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly…
We theoretically investigate the effect of transverse magnetic anisotropy on spin-flip assisted tunneling through atomic spin chains. Using a phenomenological approach and first-order perturbation theory, we analytically calculate the…
Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these…
Pulsed spin-torque switching has been studied using single-shot time-resolved electrical measurements in perpendicularly magnetized magnetic tunnel junctions as a function of pulse amplitude and junction size in 50 to 100 nm diameter…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions…
We investigate the magnetocaloric effect obtained by the rotation of a magnetic field applied to an exchange-coupled multilayer system composed of two different ferromagnetic (FM) materials. We specifically consider a system in which the…
We study the interplay of the Kondo effect and spin-polarized tunneling in a class of systems exhibiting uniaxial magnetic anisotropy, such as magnetic molecules, magnetic adatoms, or quantum dots coupled to a single localized magnetic…
Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…