Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect
Mesoscale and Nanoscale Physics
2015-06-11 v2 Materials Science
Abstract
We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that, in the high damping regime, the threshold switching current is independent of the damping constant, and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. This expression can be used to determine the physical quantities associated with spin Hall effect, and to design relevant magnetic devices based on the switching of perpendicular magnetic layers.
Keywords
Cite
@article{arxiv.1210.3442,
title = {Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect},
author = {Ki-Seung Lee and Seo-Won Lee and Byoung-Chul Min and Kyung-Jin Lee},
journal= {arXiv preprint arXiv:1210.3442},
year = {2015}
}
Comments
16 pages, 3 figures