Voltage control of magnetic anisotropy (VCMA) induced by charge accumulation is typically considered as an ultrafast process, enabling energy-efficient and high-speed magnetization switching in spintronic devices. In this work, we investigate the real-time dynamics of VCMA-assisted switching of magnetic tunnel junctions via relaxation in a magnetic field. We show that device-dependent charging effects and magnetic granularity in the free layer limit the switching speed at applied voltages close to the critical switching threshold. Increasing the voltage or the applied magnetic field reduces the incubation delay and total switching time to below a few ns. Micromagnetic simulations incorporating the finite charging times of the tunnel junction and the granularity of the magnetic film reproduce the experimental results, providing critical insights into optimizing VCMA-driven magnetization control for memory and logic applications.
@article{arxiv.2510.20701,
title = {Real-time dynamics of VCMA-assisted switching of magnetic tunnel junctions},
author = {Marco Hoffmann and Shaohai Chen and Gunasheel Kauwtilyaa Krishnaswamy and Hang Khume Tan and Sherry L. K. Yap and James Lourembam and Anjan Soumyanarayanan and Pietro Gambardella},
journal= {arXiv preprint arXiv:2510.20701},
year = {2025}
}
Comments
Marie Sk{\l}odowska-Curie Actions, H2020-MSCA-ITN-2020; Project acronym SPEAR; Grant Agreement No. 955671