Related papers: Ordered structure of FeGe$_2$ formed during solid-…
We present time-resolved high energy x-ray diffraction (tr-HEXRD), time-resolved hard x-ray photoelectron spectroscopy (tr-HAXPES) and time-resolved grazing incidence small angle x-ray scattering (tr-GISAXS) data of the reactive molecular…
Hybridization of semiconducting and magnetic materials into a single heterostructure is believed to be potentially applicable to the design of novel functional spintronic devices. In the present work we report epitaxial stabilization of…
To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth of ferromagnetic…
Crystalline Fe3O4/NiO bilayers were grown on MgO(001) substrates using reactive molecular beam epitaxy to investigate their structural properties and their morphology. The film thickness either of the Fe3O4 film or of the NiO film has been…
Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures…
We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on…
MnGe has been grown as a thin film on Si(111) substrates by molecular beam epitaxy. A 10 \AA\ layer of MnSi was used as seedlayer in order to establish the B20 crystal structure. Films of a thickness between 45 and 135 \AA\ have been…
In recent years the intermetallic alloys of Fe and Sn have gained significant interest due to a rich variety of magnetic properties present in these materials. The crystal Fe3Sn2 is a frustrated ferromagnet, while the crystallographically…
Square net tellurides host an array of electronic ground states and commonly exhibit charge-density-wave ordering. Here we report the epitaxy of DyTe$_{2-\delta}$ on atomically flat MgO (001) using molecular beam epitaxy. The films are…
The present paper is dedicated to the structural study of crystallographic peculiarities appearing in epitaxial films of metastable epsilon iron oxide ($\varepsilon$-Fe$_2$O$_3$) grown by pulsed laser deposition onto a semiconductor GaN…
Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical.…
We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By…
Polar catastrophe at the interface of oxide materials with strongly correlated electrons has triggered a flurry of new research activities. The expectations are that the design of such advanced interfaces will become a powerful route to…
In this study, high-quality thin films of the topological semimetal phase NiTe$_2$ were prepared using molecular beam epitaxy (MBE) technique, confirmed through X-ray diffraction with pronounced Laue oscillations. Electrical transport…
We demonstrate epitaxial growth of copper selenide (Cu$_{2-x}$Se) thin films in both cubic and rhombohedral phases, achieved via molecular beam epitaxy on Al$_2$O$_3$ (001) substrates. Remarkably, the high-temperature cubic phase -- which…
Single crystal x-ray diffraction, magnetic susceptibility, heat capacity, and electrical resistivity measurements are reported for the new tetragonal compound Ce$_{2}$PdGe$_{3}$, which forms in the space group $P4_{2}/mmc$ (\#131) $-$ a…
Layered oxides have been intensively studied due to their high designability for various electronic functions. Here we synthesize a new oxide as epitaxial thin film form by pulsed laser deposition. Film characterizations including…
Epitaxial films of Co40Fe40B20 (further - CoFeB) were grown on Bi2Te3(001) and Bi2Se3(001) substrates by laser molecular beam epitaxy (LMBE) technique at 200-400C. Bcc-type crystalline structure of CoFeB with (111) plane parallel to (001)…
In the present contribution we review basic mathematical results for three physical systems involving self-organising solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting,…
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates.…