Square net tellurides host an array of electronic ground states and commonly exhibit charge-density-wave ordering. Here we report the epitaxy of DyTe2−δ on atomically flat MgO (001) using molecular beam epitaxy. The films are single phase and highly oriented as evidenced by transmission electron microscopy and X-ray diffraction measurements. Epitaxial strain is evident in films and is relieved as the thickness increases up to a value of approximately 20 unit cells. Diffraction features associated with a supercell in the films are resolved which is coupled with Te-deficiency. First principles calculations attribute the formation of this defect lattice to nesting conditions in the Fermi surface, which produce a periodic occupancy of the conducting Te square-net, and opens a band gap at the chemical potential. This work establishes the groundwork for exploring the role of strain in tuning electronic and structural phases of epitaxial square-net tellurides and related compounds.
@article{arxiv.2308.14159,
title = {Supercell formation in epitaxial rare-earth ditelluride thin films},
author = {Adrian Llanos and Salva Salmani-Rezaie and Jinwoong Kim and Nicholas Kioussis and David A. Muller and Joseph Falson},
journal= {arXiv preprint arXiv:2308.14159},
year = {2026}
}