Interfacing topological insulators and ferrimagnets: Bi$_2$Te$_3$ and Fe$_3$O$_4$ heterostructures grown by molecular beam epitaxy

V. M. Pereira; C. N. Wu; C. -A. Knight; A. Choa; L. H. Tjeng; S. G. Altendorf

doi:10.1063/5.0010339

Interfacing topological insulators and ferrimagnets: Bi$_2$Te$_3$ and Fe$_3$O$_4$ heterostructures grown by molecular beam epitaxy

Materials Science 2020-09-07 v1

Authors: V. M. Pereira , C. N. Wu , C. -A. Knight , A. Choa , L. H. Tjeng , S. G. Altendorf

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Abstract

Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures of Bi $_2$ Te $_3$ and Fe $_3$ O $_4$ . By growing two different types of heterostructures by molecular beam epitaxy, Fe $_3$ O $_4$ on Bi $_2$ Te $_3$ and Bi $_2$ Te $_3$ on Fe $_3$ O $_4$ , we explore differences in chemical stability, crystalline quality, electronic structure, and transport properties. We find the heterostructure Bi $_2$ Te $_3$ on Fe $_3$ O $_4$ to be a more viable approach, with transport signatures in agreement with a gap opening in the topological surface states.

Keywords

topological insulator ferrimagnet heterostructure molecular beam epitaxy proximity effect quantum anomalous hall effect bi2te3 fe3o4

Cite

@article{arxiv.2006.14914,
  title  = {Interfacing topological insulators and ferrimagnets: Bi$_2$Te$_3$ and Fe$_3$O$_4$ heterostructures grown by molecular beam epitaxy},
  author = {V. M. Pereira and C. N. Wu and C. -A. Knight and A. Choa and L. H. Tjeng and S. G. Altendorf},
  journal= {arXiv preprint arXiv:2006.14914},
  year   = {2020}
}

Comments

accepted for publication in APL Materials

Interfacing topological insulators and ferrimagnets: Bi$_2$Te$_3$ and Fe$_3$O$_4$ heterostructures grown by molecular beam epitaxy

Abstract

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