Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

Yuxin Liu; Xuefan Niu; Rencong Zhang; Qinghua Zhang; Jing Teng; Yongqing Li

doi:10.1088/0256-307X/38/5/057303

Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

Mesoscale and Nanoscale Physics 2021-04-29 v1 Quantum Physics

Authors: Yuxin Liu , Xuefan Niu , Rencong Zhang , Qinghua Zhang , Jing Teng , Yongqing Li

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Abstract

We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances. Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance, which exceeds 0.1 e2/h at temperature of 1.6 K and magnetic field of 5 T, even though only the top TI surface is in proximity to MnSe. This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.

Keywords

topological insulator anomalous hall effect magnetoresistance

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@article{arxiv.2104.13655,
  title  = {Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface},
  author = {Yuxin Liu and Xuefan Niu and Rencong Zhang and Qinghua Zhang and Jing Teng and Yongqing Li},
  journal= {arXiv preprint arXiv:2104.13655},
  year   = {2021}
}

Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

Abstract

Keywords

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