Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI / magnetic-TI EuS / Sb2−xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagnetic-like structure near the MI/TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping provides insights into controllable engineering of magnetic order using a hybrid heterostructure.
@article{arxiv.1505.02306,
title = {Proximity Driven Enhanced Magnetic Order at Ferromagnetic Insulator / Magnetic Topological Insulator Interface},
author = {Mingda Li and Cui-Zu Chang and Brian. J. Kirby and Michelle Jamer and Wenping Cui and Lijun Wu and Yimei Zhu and Don Heiman and Ju Li and Jagadeesh Moodera},
journal= {arXiv preprint arXiv:1505.02306},
year = {2015}
}