We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces strongly renormalized mid-gap states inside the MI region, which still have a remnant of the helical energy-spectrum. The penetration of low-energy electrons, which is controlled by the interface tunneling V, largely enhances the electron mass inside the MI and also splits a single Dirac-cone at edge sites into the spatially-separated two Dirac-cones in the strong V region.
@article{arxiv.1303.2781,
title = {Proximity effects in a topological-insulator/Mott-insulator heterostructure},
author = {Suguru Ueda and Norio Kawakami and Manfred Sigrist},
journal= {arXiv preprint arXiv:1303.2781},
year = {2015}
}