Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

Ivana Vobornik; Unnikrishnan Manju; Jun Fujii; Francesco Borgatti; Piero Torelli; Damjan Krizmancic; Yew San Hor; Robert J. Cava; Giancarlo Panaccione

doi:10.1021/nl201275q

Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

Materials Science 2011-09-21 v2 Strongly Correlated Electrons

Authors: Ivana Vobornik , Unnikrishnan Manju , Jun Fujii , Francesco Borgatti , Piero Torelli , Damjan Krizmancic , Yew San Hor , Robert J. Cava , Giancarlo Panaccione

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Abstract

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating condition. Here we demonstrate that the long range ferromagnetism at ambient temperature can be induced in Bi2-xMnxTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

Keywords

magnetic proximity effect topological insulators spintronic applications ferromagnetism Bi2-xMnxTe3 interface-controlled spin coherence

Cite

@article{arxiv.1109.3609,
  title  = {Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators},
  author = {Ivana Vobornik and Unnikrishnan Manju and Jun Fujii and Francesco Borgatti and Piero Torelli and Damjan Krizmancic and Yew San Hor and Robert J. Cava and Giancarlo Panaccione},
  journal= {arXiv preprint arXiv:1109.3609},
  year   = {2011}
}

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accepted in Nano Letters

Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

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