English

Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Mesoscale and Nanoscale Physics 2014-07-31 v1 Materials Science

Abstract

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin pumping from a metallic ferromagnet (CoFeB) into a 3D topological insulator (Bi2Se3) and demonstrate successful spin injection from CoFeB into Bi2Se3 and the direct detection of the electromotive force generated by the inverse spin Hal effect (ISHE) at room temperature. The spin pumping, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) linewidth. We find that the FMR linewidth more than quintuples, the spin mixing conductance can be as large as 3.4*10^20m^-2 and the spin Hall angle can be as large as 0.23 in the Bi2Se3 layer.

Keywords

Cite

@article{arxiv.1407.7940,
  title  = {Room Temperature Spin Pumping in Topological Insulator Bi2Se3},
  author = {Mahdi Jamali and Joon Sue Lee and Yang Lv and Zhengyang Zhao and Nitin Samarth and Jian-Ping Wang},
  journal= {arXiv preprint arXiv:1407.7940},
  year   = {2014}
}
R2 v1 2026-06-22T05:16:22.437Z