We investigate effects of strong correlation on the surface state of topological insulator (TI). We argue that electrons in the regime of crossover from weak anti-localization to weak localization, are strongly correlated and calculate magneto-transport coefficients of TI using gauge gravity principle. Then, we examine, magneto-conductivity (MC) formula and find excellent agreement with the data of chrome doped Bi2Te3 in the crossover regime. We also find that cusp-like peak in MC at low doping is absent, which is natural since quasi-particles disappear due to the strong correlation.
@article{arxiv.1703.07361,
title = {Strong Correlation Effects on Surfaces of Topological Insulators via Holography},
author = {Yunseok Seo and Geunho Song and Sang-Jin Sin},
journal= {arXiv preprint arXiv:1703.07361},
year = {2017}
}
Comments
5 pages, 6 figures, figure and reference added, discussion on the result added