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Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets

Materials Science 2019-03-18 v1 Mesoscale and Nanoscale Physics

Abstract

We implement the molecular beam epitaxy method to embed the black-phosphorus-like bismuth nanosheets into the bulk ferromagnet Cr2_2Te3_3. As a typical surfactant, bismuth lowers the surface tensions and mediates the layer-by-layer growth of Cr2_2Te3_3. Meanwhile, the bismuth atoms precipitate into black-phosphorus-like nanosheets with the lateral size of several tens of nanometers. In Cr2_2Te3_3 embedded with Bi-nanosheets, we observe simultaneously a large topological Hall effect together with the magnetic susceptibility plateau and magnetoresistivity anomaly. As a control experiment, none of these signals is observed in the pristine Cr2_2Te3_3 samples. Therefore, the Bi-nanosheets serve as seeds of topological Hall effect induced by non-coplanar magnetic textures planted into Cr2_2Te3_3. Our experiments demonstrate a new method to generates a large topological Hall effect by planting strong spin-orbit couplings into the traditional ferromagnet, which may have potential applications in spintronics.

Keywords

Cite

@article{arxiv.1903.06486,
  title  = {Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets},
  author = {Liang Zhou and Junshu Chen and Xiaobin Chen and Bin Xi and Yang Qiu and Junwei Zhang and Linjing Wang and Runnan Zhang and Bicong Ye and Pingbo Chen and Xixiang Zhang and Guoping Guo and Dapeng Yu and Jia-Wei Mei and Fei Ye and Gan Wang and Hongtao He},
  journal= {arXiv preprint arXiv:1903.06486},
  year   = {2019}
}