Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces

K. Hamaya; K. Ueda; Y. Kishi; Y. Ando; T. Sadoh; M. Miyao

doi:10.1063/1.2996581

Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces

Materials Science 2009-11-13 v1

Authors: K. Hamaya , K. Ueda , Y. Kishi , Y. Ando , T. Sadoh , M. Miyao

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe $_{3}$ Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$ C, we realize epitaxial growth of ferromagnetic Fe $_{3}$ Si layers on Si (111) with keeping an abrupt interface, and the grown Fe $_{3}$ Si layer has the ordered $DO_{3}$ phase. Measurements of magnetic and electrical properties for the Fe $_{3}$ Si/Si(111) yield a magnetic moment of ~ 3.16 $mu_{B}$ /f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ~ 1.08, respectively.

Keywords

epitaxial thin films ferromagnetism silicon physics

Cite

@article{arxiv.0810.2835,
  title  = {Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces},
  author = {K. Hamaya and K. Ueda and Y. Kishi and Y. Ando and T. Sadoh and M. Miyao},
  journal= {arXiv preprint arXiv:0810.2835},
  year   = {2009}
}

Comments

3 pages, 3 figures

Related papers

View all related →