Related papers: Multi-bit MRAM storage cells utilizing serially co…
The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…
Accelerometers have widespread applications and are an essential component in many areas such as automotive, consumer electronics and industrial applications. Most commercial accelerometers are based on micro-electromechanical system (MEMS)…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below…
The emerging magneto-resistive RAM (MRAM) has considerable potential to become a universal memory technology because of its several advantages: unlimited endurance, lower read/write latency, ultralow-power operation, high-density, and CMOS…
The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents.…
In this work, we evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We introduce a programming methodology that allows for operating metal-oxide…
The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter,…
One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that…
Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…
The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two…
Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that…
Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power…
Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck…
Dream of developing molecule-based logic and memory device is more than 70-year-old. Presently, molecule-based devices are also considered for quantum computation hardware. The recent studies have shown the molecule connected to metal leads…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…
The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of…
Artificial neural networks are a valuable tool for radio-frequency (RF) signal classification in many applications, but digitization of analog signals and the use of general purpose hardware non-optimized for training make the process slow…