Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically controlled vdW-MFTJ based on a CrBr3/MnPSe3/CrBr3 vertical heterostructure, which achieves ferroelectric polarization reversal without relying on atomic migration driven by inversion symmetry breaking. Using first-principles calculations, we investigate the spin-polarized quantum transport properties of the proposed structure. By integrating asymmetric PtTe2/alkali-metal (Li/Na/K)-doped/intercalated CrBr3 electrodes, the device demonstrates exceptional performance, with a maximum tunneling magnetoresistance (TMR) exceeding 8.1×105\% and tunneling electroresistance (TER) reaching 2499\%, while the spin-filtering channels can be flexibly controlled by the magnetization direction of the magnetic free layer, achieving perfect spin-filtering over a broad bias voltage range. Applying an external bias voltage further enhances these metrics, increasing TMR to 3.6×107\% and TER to 9990\%. Notably, a pronounced negative differential resistance (NDR) effect is observed, yielding an unprecedented peak-to-valley ratio (PVR) of 9.55×109\%, representing the highest value reported for vertical tunnel junctions. These extraordinary characteristics highlight the potential of vdW-MFTJs for ultra-efficient electronic switching, a key feature for next-generation spintronic devices. Our findings provide a solid theoretical foundation for designing and developing high-performance magnetic storage and logic technologies.
@article{arxiv.2501.00761,
title = {Giant Nonvolatile Multistate Resistance with Fully Magnetically Controlled van der Waals Multiferroic Tunnel Junctions},
author = {Zhi Yan and Xujin Zhang and Jianhua Xiao and Cheng Fang and Xiaohong Xu},
journal= {arXiv preprint arXiv:2501.00761},
year = {2025}
}