Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple nonvolatile resistive states are highly suitable for new physics and next-generation storage electronics. However, currently reported vdW-MFTJs are based on two types of materials, i.e., vdW ferromagnetic and ferroelectric materials, forming a multiferroic system. This undoubtedly introduces additional interfaces, increasing the complexity of experimental preparation. Herein, we engineer vdW intrinsic MFTJs utilizing bilayer VS2. By employing the nonequilibrium Green's function combined with density functional theory, we systematically investigate the influence of three types of electrodes (including non-vdW pure metal Ag/Au, vdW metallic 1T-MoS2/2H-PtTe2, and vdW ferromagnetic metallic Fe3GaTe2/Fe3GeTe2) on the electronic transport properties of VS2-based intrinsic MFTJs. We demonstrate that these MFTJs manifest a giant electrode-dependent electronic transport characteristic effect. Comprehensively comparing these electrode pairs, the Fe3GaTe2/Fe3GeTe2 electrode combination exhibits optimal transport properties, the maximum TMR (TER) can reach 10949\% (69\%) and the minimum resistance-area product (RA) is 0.45 Ωμm2, as well as the perfect spin filtering and negative differential resistance effects. More intriguingly, TMR (TER) can be further enhanced to 34000\% (380\%) by applying an external bias voltage (0.1 V), while RA can be reduced to 0.16 Ωμm2 under the influence of biaxial stress (-3\%). Our proposed concept of designing vdW-MFTJs using intrinsic multiferroic materials points towards new avenues in experimental exploration.
@article{arxiv.2403.12845,
title = {Giant electrode effect on tunneling magnetoresistance and electroresistance in van der Waals intrinsic multiferroic tunnel junctions using VS2},
author = {Zhi Yan and Ruixia Yang and Cheng Fang and Wentian Lu and Xiaohong Xu},
journal= {arXiv preprint arXiv:2403.12845},
year = {2024}
}