Related papers: Single Electron-Hole Pair Sensitive Silicon Detect…
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for detecting individual ion implantation events using…
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…
Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single electron…
We present results of a search for spin-independent dark matter-nucleon interactions in a 1 cm$^2$ by 1 mm thick (0.233 gram) high-resolution silicon athermal phonon detector operated above ground. For interactions in the substrate, this…
The absorption and emission spectra of silicon nanocrystals up to 1 nm diameter including geometry optimization and the many-body effects induced by the creation of an electron-hole pair have been calculated within a first-principles…
Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18…
For high-bias operation devices such as silicon carbide (SiC) power devices, early detection of failure mechanisms is essential to ensure reliability. This requires a method to map high electric fields with high spatial resolution, which…
Characterization of a hybrid ${\it telescope}$ with gas transmission detector ($\Delta$E) and a solid-state stop detector (E) has been fabricated for detection of low energy $\alpha$ particles between 5 to 1 MeV. The detector is developed…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper…
When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…
A silicon microstrip detector (SSD) has been developed to have state of the art spatial resolution and a large sensitive area under stringent power constraints. The design incorporates three floating strips with their bias resistors…
A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event…
We present experimental results using a single-electron resolution Skipper-CCD running above ground level to demonstrate the potential of this technology for its use in reactor neutrino observations and other low-energy particle interaction…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…
The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI…
Soft X-ray experiments at synchrotron light sources are essential for a wide range of research fields. However, commercially available detectors for this energy range often cannot deliver the necessary combination of quantum efficiency,…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…
We consider the free carrier dispersion effect in a semiconductor nanocavity in the limit of discrete photoexcited electron-hole pairs. This analysis reveals the possibility of ultrafast, incoherent transduction and gain from a single…
The high energy physics community has recently identified an $e^+e^-$ Higgs factory as one of the next-generation collider experiments, following the completion of the High Luminosity LHC program at CERN.The moderate radiation levels…