Related papers: Single Electron-Hole Pair Sensitive Silicon Detect…

We have developed a non-destructive readout system that uses a floating-gate amplifier on a thick, fully depleted charge coupled device (CCD) to achieve ultra-low readout noise of 0.068 e- rms/pix. This is the first time that discrete…

Studies of the response of the SiD silicon-tungsten electromagnetic calorimeter (ECal) are presented. Layers of highly granular (13 mm^2 pixels) silicon detectors embedded in thin gaps (~ 1 mm) between tungsten alloy plates give the SiD…

A 0.93 gram $1{\times}1{\times}0.4$ cm$^3$ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector's response under a…

A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…

Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect…

Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…

We report operation and characterization of a lab-assembled single-photon detector based on commercial silicon avalanche photodiodes (PerkinElmer C30902SH, C30921SH). Dark count rate as low as 5 Hz was achieved by cooling the photodiodes…

Semi monolithic detector designs with a series of stacked thin monolithic scintillator plates and side readout are an attractive approach for potentially achieving very high performance in a positron emission tomography (PET) scanner. In…

We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby…

We use a science-grade Skipper Charge Coupled Device (Skipper-CCD) operating in a low-radiation background environment to develop a semi-empirical model that characterizes the origin of single-electron events in CCDs. We identify, separate,…

We present the design and characterization of a large-area Cryogenic PhotoDetector (CPD) designed for active particle identification in rare event searches, such as neutrinoless double beta decay and dark matter experiments. The detector…

We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…

Dark matter with mass below about a GeV is essentially unobservable in conventional direct detection experiments. However, newly proposed technology will allow the detection of single electron events in semiconductor materials with…

We present the single event effect (SEE) tolerance of a mixed-signal application-specific integrated circuit (ASIC) developed for a charge-coupled device camera onboard a future X-ray astronomical mission. We adopted proton and heavy ion…

We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT)…

Optical and electronic phenomena in solids arise from the behaviour of electrons and holes (unoccupied states in a filled electron sea). Electron-hole symmetry can often be invoked as a simplifying description, which states that electrons…

This article describes the crystal selection and quality control utilized to develop and calibrate a high resolution array of CsI(TI) scintillator crystals for the detection of energetic charged particles. Alpha sources are used to test the…

We are developing position sensitive silicon detectors (PSD) which have an electrode at each of four corners so that the incident position of a charged particle can be obtained using signals from the electrodes. It is expected that the…

We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition,…

Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon…