In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper presents a detailed comparison of numerical simulations with time resolved current measurements on planar silicon sensors using 660~nm laser light to create different densities of electron hole pairs.
@article{arxiv.1007.4433,
title = {Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors},
author = {Julian Becker and Klaus Gärtner and Robert Klanner and Rainer Richter},
journal= {arXiv preprint arXiv:1007.4433},
year = {2016}
}