Related papers: Single Electron-Hole Pair Sensitive Silicon Detect…
We propose a sensitive new detector based on Cooper pair breaking in a superconductor. The quantum capacitor detector (QCD) exploits the extraordinary sensitivity of superconducting single-electron devices to the presence of quasiparticles…
A prototype Silicon-Tungsten electromagnetic calorimeter (ECAL) for an International Linear Collider (ILC) detector was installed and tested during summer and autumn 2006 at CERN. The detector had 6480 silicon pads of dimension 1x1 cm^2.…
Charge multiplication through avalanche processes is commonly employed in the detection of single photons or charged particles in high-energy physics and beyond. In this report, we provide a detailed discussion of the properties of…
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…
The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction,…
This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates.…
High resolution resistors capable of detecting minuscule currents are vital for advanced sensors, but existing off-shelf models struggle with inconsistent resistance under varying voltages. The underlying physics of this issue is rooted in…
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…
Superconducting strip single-photon detectors (SSPDs) are excellent tools not only for single-photon detection but also for single-particle detection owing to their high detection efficiency, low dark counts, and low time jitter. Although…
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…
We present a novel unifying interpretation of excess event rates observed in several dark matter direct-detection experiments that utilize single-electron threshold semiconductor detectors. Despite their different locations, exposures,…
The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common…
The master equation for the cluster-size distribution function is solved numerically to investigate the electron-hole droplet formation claimed to be discovered in the direct-gap CuCl excited by picosecond laser pulses [Nagai {\em et al.},…
We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in…
Phonon-mediated particle detectors based on single crystals and operated at millikelvin temperatures are used in rare-event experiments for neutrino physics and dark-matter searches. In general, these devices are not sensitive to the…
The necessity to increase exposure in rare event searches experiments by maintaining a low energy threshold and a good energy resolution leads to segmented detectors as in EDELWEISS (Dark Matter), CUORE (0{\nu}\b{eta}\b{eta}) or RICOCHET…
Electron-hole pair creation by an adsorbate incident on a metal surface is described using \textit{ab initio} methods. The approach starts with standard first principles electronic structure theory, and proceeds to combine classical,…
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide band gap makes it an…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…