Related papers: High Performance GNR Power Gating for Low-Voltage …

The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…

Power dissipation in integrated circuits is one of the major concerns to the research community, at the verge when more number of transistors are integrated on a single chip. The substantial source of power dissipation in sequential…

Multi-Valued Logic (MVL) has more than one logic level defined to represent data whereas binary logic has 2 logic levels. It has been shown that the MVL circuits use the circuit resources more effectively at different voltage levels with…

Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off…

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…

Throughout the world, the numbers of researchers or hardware designer struggle for the reducing of power dissipation in low power VLSI systems. This paper presented an idea of using the power gating structure for reducing the sub threshold…

Power dissipation in the sequential systems of modern CPU integrated chips (CPU-IC viz., Silicon Chip) is in discussion since the last decade. Researchers have been cultivating many low power design methods to choose the best potential…

A modular, programmable, and high performance Power Gating strategy, called cluster based tunable sleep transistor cell Power Gating, has been introduced in the present paper with a few modifications. Furthermore, a detailed comparison of…

Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nano-scale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we…

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…

We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…

The trench gate MOSFET has established itself as the most suitable power device for low to medium power applications by offering the lowest possible ON resistance among all MOS devices. The evolution of the trench gate power MOSFET has been…

To reduce the leakage power of inactive (dark) silicon components, modern processor systems shut-off these components' power supply using low-leakage transistors, called power-gates. Unfortunately, power-gates increase the system's…

We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…

The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport equation in an atomistic basis set self-consistently with a…

Portable devices like smartphones, tablets, wearable electronic devices, medical implants, wireless sensor nodes, and Internet-of-Things (IoT) devices have tremendous constraints on their energy consumption. Adding more functionalities onto…

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as…

Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field…

As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this…