Related papers: High Performance GNR Power Gating for Low-Voltage …

Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…

Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…

We present Gradient Gating (G$^2$), a novel framework for improving the performance of Graph Neural Networks (GNNs). Our framework is based on gating the output of GNN layers with a mechanism for multi-rate flow of message passing…

Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the…

Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent…

The paper presents simulation study of thin ferroelectrics (Si doped HfO2, PZT) PGP FDSOI NCFETs at circuit level for high performance, low VDD low-power digital circuits. The baseline PGP FDSOI MOSFET has 20 nm metal gate length with…

This article presents novel high speed and low power full adder cells based on carbon nanotube field effect transistor (CNFET). Four full adder cells are proposed in this article. First one (named CN9P4G) and second one (CN9P8GBUFF)…

The exponential emergence of Field Programmable Gate Array (FPGA) has accelerated the research of hardware implementation of Deep Neural Network (DNN). Among all DNN processors, domain specific architectures, such as, Google's Tensor…

Circuit representation learning has shown promising results in advancing the field of Electronic Design Automation (EDA). Existing models, such as DeepGate Family, primarily utilize Graph Neural Networks (GNNs) to encode circuit netlists…

Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the…

Security and energy are considered as the most important parameters for designing and building a computing system nowadays. Today's attacks target different layers of the computing system (i.e. software and hardware). Introduction of new…

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…

In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT) power MOSFET with three sections in the trench gate (an N+ poly gate sandwiched between two P+ poly gates) and having different gate oxide thicknesses (increasing…

In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency…

An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting…

In present work a new XNOR gate using three transistors has been presented, which shows power dissipation of 550.7272$\mu$W in 0.35$\mu$m technology with supply voltage of 3.3V. Minimum level for high output of 2.05V and maximum level for…

The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…

Security assessment is one of the most crucial functions of a power system operator. However, growing complexity and unpredictability make this an increasingly complex and computationally difficult task. In recent times, machine learning…

Efficient delivery of current from PCB to point-of-load (POL) is a primary concern in modern high-power high-density integrated systems. Traditionally, a 48 V power signal is converted to the low, POL voltage at the board and/or package…

In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the…