Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent atomistic simulations. The results indicate strong dependence of the GNR C-V characteristics on the edge shape. For zigzag edge GNRs, highly non-uniform charge distribution in the transverse direction due to edge states lowers the gate capacitance considerably, and the self-consistent electrostatic potential significantly alters the band structure and carrier velocity. For an armchair edge GNR, the quantum capacitance is a factor of 2 smaller than its corresponding zigzag carbon nanotube, and a multiple gate geometry is less beneficial for transistor applications. Magnetic field results in pronounced oscillations on C-V characteristics.
@article{arxiv.0705.3068,
title = {Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons},
author = {Jing Guo and Youngki Yoon and Yijian Ouyang},
journal= {arXiv preprint arXiv:0705.3068},
year = {2015}
}