This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded In0.75Ga0.25As + In0.53Ga0.47As channel incorporating strain and atomic layer deposited Al2O3/20nm Ti gate. C-V characteristics with introduction and variation of In-composition grading and also grading in doping concentration are explored.Finite element method has been used to solve Poisson's equation and Schr\"odinger's equation self-consistently considering wave function penetration and other quantum effects to calculate gate capacitance and charge profile for different gate biases. The device parameters are taken from a recently introduced experimental device.
@article{arxiv.1406.5257,
title = {Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor},
author = {Saeed Uz Zaman Khan and Md. Shafayat Hossain and Md. Obaidul Hossen and Fahim Ur Rahman and Rifat Zaman and Quazi D. M. Khosru},
journal= {arXiv preprint arXiv:1406.5257},
year = {2014}
}
Comments
Accepted for presentation in 13th IEEE International Electro/Information Technology Conference (EIT), Rapid City, SD, USA, 9-11 May 2013