Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility due to device geometries, surface and interface states and gate dielectric constants and thicknesses. Direct experimental evidence showed that surround-gated nanowire transistors exhibit higher capacitance and better electrostatic gate control than top-gated devices, and are the most promising structure for future high performance nanoelectronics.
@article{arxiv.0705.2579,
title = {Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment},
author = {Ryan Tu and Li Zhang and Yoshio Nishi and Hongjie Dai},
journal= {arXiv preprint arXiv:0705.2579},
year = {2007}
}