Related papers: High Performance GNR Power Gating for Low-Voltage …

Among the many variants of graph neural network (GNN) architectures capable of modeling data with cross-instance relations, an important subclass involves layers designed such that the forward pass iteratively reduces a graph-regularized…

For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of…

We study the performance of a hybrid Graphene-Boron Nitride {GNR-BN} armchair nanoribbon {a-GNR-BN} MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p+1 and 3p+2 of a-GNR-BN with BN atoms embedded on…

Accurate and scalable surrogate models for AC power flow are essential for real-time grid monitoring, contingency analysis, and decision support in increasingly dynamic and inverter-dominated power systems. However, most existing surrogates…

We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent…

In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate…

This work focuses on grid-forming (GFM) control of Interconnecting Power Converters (IPCs) that are used to interconnect multiple HVAC and HVDC subgrids to form a grid of grids. We introduce the concept of dual-port GFM control that…

Recently, an extremely-air-stable one-dimensional 7-9-7-AGNR was successfully fabricated. To further reveal its potential application in sub-5-nm field-effect transistors (FETs), there is an urgent need to develop integrated circuits. Here,…

In this article, we proposed a Variable threshold MOSFET(VTMOS)approach which is realized from Dynamic Threshold MOSFET(DTMOS), suitable for sub-threshold digital circuit operation. Basically the principle of sub- threshold logics is…

This paper investigates power swing characteristics of grid-forming voltage source converter (GFM-VSC) systems considering the current limitation mode in both non-inertial and inertial GFM-VSC systems. Following grid faults, non-inertial…

This paper presents the design of an 800 V 11 kVA three-level three-phase active neutral point clamped inverter, utilizing 650 V gallium nitride enhancement-mode high-electron-mobility transistors, to evaluate its feasibility in electric…

Emerging nano-scale programmable Resistive-RAM (RRAM) has been identified as a promising technology for implementing brain-inspired computing hardware. Several neural network architectures, that essentially involve computation of scalar…

We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions…

This paper proposes a Low-Power, Energy Efficient 4-bit Binary Coded Decimal (BCD) adder design where the conventional 4-bit BCD adder has been modified with the Clock Gated Power Gating Technique. Moreover, the concept of DVT (Dual-vth)…

Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative…

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…

Time Projection Chamber (TPC) is one of the main tracking systems for many current and future collider experiments at RHIC and LHC. It has a capability to measure the space points of charged tracks for good momentum resolution as well as…

With the development of hardware-optimized deployment of spiking neural networks (SNNs), SNN processors based on field-programmable gate arrays (FPGAs) have become a research hotspot due to their efficiency and flexibility. However,…

Accurate and efficient power flow (PF) analysis is crucial in modern electrical networks' operation and planning. Therefore, there is a need for scalable algorithms that can provide accurate and fast solutions for both small and large scale…

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…