Related papers: Superinjection in diamond homojunction P-I-N
The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV)…
We have investigated the superconductivity discovered in boron (B)-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional…
In this work we have demonstrated the growth of nanocrystalline diamond on boron nitride ceramic. We measured the zeta potential of the ceramics to select the diamond seeds. Diamond was then grown on the seeded ceramics using a microwave…
We demonstrate the feasibility of fabricating light-waveguiding microstructures in bulk single-crystal diamond by means of direct ion implantation with a scanning microbeam, resulting in the modulation of the refractive index of the…
The demands on optical components to tolerate high radiation dose and manipulate hard x-ray beams that can fit the experiment requirements, are constantly increasing due to the advancements in the available x-ray sources. Here we have…
The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous…
We have investigated the low energy electronic state of a boron-doped diamond thin film by the ultrahigh resolution laser-excited photoemission spectroscopy. We observed a clear shift of the leading edge below 11 K indicative of a…
Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in…
Inspired by a recent experimental and theoretical study [Yang et al., 2017], wherein protrusions in graphene have been proposed as an effective strategy to enhance the performance of sodium ion batteries, a comprehensive study of the…
Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed…
Ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma possess a marked structural feature of diamond grains embedded in an amorphous carbon and a hydrogenated amorphous carbon…
To achieve a high-density electron-hole plasma in group-III nitrides for efficient light emission, we propose a planar two-dimensional (2D) p-i-n structure that can be created in selectively-doped superlattices and quantum wells. The 2D…
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and…
Efficiency droop, i.e., a decline in brightness of LEDs at high electrical currents, has limited the performance of all commercially available LEDs. Until now, it has limited the output power of sub-micron LEDs and lasers to nanowatt range.…
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type…
Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while…
We report hyperpolarization of the electronic spins associated with substitutional nitrogen defects in bulk diamond crystal. Hyperpolarization is achieved by optical pumping of nitrogen vacancy centers followed by rapid cross relaxation at…
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to…
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary…
The low efficiency of porous silicon (p-Si) luminescence hinders the development of silicon-based optoelectronic devices. The increase in p-Si emission using near-field enhancement, owing to the incorporation of gold nanoparticles (AuNPs)…