The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at the low Si-ion implantation fluences.
@article{arxiv.1912.09352,
title = {Silicon-vacancy color centers in phosphorus-doped diamond},
author = {Assegid Mengistu Flatae and Stefano Lagomarsino and Florian Sledz and Navid Soltani and Shannon S. Nicley and Ken Haenen and Robert Rechenberg and Michael F. Becker and Silvio Sciortino and Nicla Gelli and Lorenzo Giuntini and Francesco Taccetti and Mario Agio},
journal= {arXiv preprint arXiv:1912.09352},
year = {2021}
}