Electrical excitation of silicon-vacancy centers in single crystal diamond

Amanuel M. Berhane; Sumin Choi; Hiromitsu Kato; Toshiharu Makino; Norikazu Mizuochi; Satoshi Yamasaki; Igor Aharonovich

doi:10.1063/1.4919388

Electrical excitation of silicon-vacancy centers in single crystal diamond

Materials Science 2015-05-20 v1 Optics

Authors: Amanuel M. Berhane , Sumin Choi , Hiromitsu Kato , Toshiharu Makino , Norikazu Mizuochi , Satoshi Yamasaki , Igor Aharonovich

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Abstract

Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices employing colour centres in single crystal diamond.

Keywords

silicon-vacancy centers single crystal diamond electrical excitation electroluminescence photoluminescence ion implantation nanophotonics devices

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@article{arxiv.1503.04778,
  title  = {Electrical excitation of silicon-vacancy centers in single crystal diamond},
  author = {Amanuel M. Berhane and Sumin Choi and Hiromitsu Kato and Toshiharu Makino and Norikazu Mizuochi and Satoshi Yamasaki and Igor Aharonovich},
  journal= {arXiv preprint arXiv:1503.04778},
  year   = {2015}
}

Electrical excitation of silicon-vacancy centers in single crystal diamond

Abstract

Keywords

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