Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb doping concentrations (5 to 11 at.%) incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.
Cite
@article{arxiv.1411.7044,
title = {n-Type Chalcogenides by Ion Implantation},
author = {Mark A. Hughes and Yanina Fedorenko and Behrad Gholipour and Jin Yao and Tae-Hoon Lee and Russell M. Gwilliam and Kevin P. Homewood and Steven Hinder and Daniel W. Hewak and Stephen R. Elliott and Richard J. Curry},
journal= {arXiv preprint arXiv:1411.7044},
year = {2014}
}