The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.
@article{arxiv.1410.5677,
title = {Electrical properties of Bi-implanted amorphous chalcogenide films},
author = {Yanina G. Fedorenko and Mark A. Hughes and Julien L. Colaux and C. Jeynes and Russell M. Gwilliam and Kevin Homewood and B. Gholipour and J. Yao and Daniel W. Hewak and Tae-Hoon Lee and Stephen R. Elliott and Richard J. Curry},
journal= {arXiv preprint arXiv:1410.5677},
year = {2014}
}
Comments
This is an extended version of the results presented in Proc. SPIE 8982, 898213 (2014)