Laterally-doped heterostructures for III-N lasing devices
Abstract
To achieve a high-density electron-hole plasma in group-III nitrides for efficient light emission, we propose a planar two-dimensional (2D) p-i-n structure that can be created in selectively-doped superlattices and quantum wells. The 2D p-i-n structure is formed in the quantum well layers due to efficient activation of donors and acceptors in the laterally doped barriers. We show that strongly non-equilibrium 2D electron-hole plasma with density above can be realized in the i-region of the laterally biased p-i-n structure, enabling the formation of interband population inversion and stimulated emission from such a LAteral Current pumped Emitter (LACE). We suggest that implementation of the lateral p-i-n structures provides an efficient way of utilizing potential-profile-enhanced doping of superlattices and quantum wells for electric pumping of nitride-based lasers.
Keywords
Cite
@article{arxiv.cond-mat/0203578,
title = {Laterally-doped heterostructures for III-N lasing devices},
author = {S. M. Komirenko and K. W. Kim and V. A. Kochelap and J. M. Zavada},
journal= {arXiv preprint arXiv:cond-mat/0203578},
year = {2009}
}
Comments
10 pages, 1 table, 2 figures (3 actually submitted)