Related papers: Laterally-doped heterostructures for III-N lasing …
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a…
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si…
Different two-dimensional materials, when combined together to form heterostructures, can exhibit exciting properties that do not exist in individual components. Therefore, intensive research efforts have been devoted to their fabrication…
Simulations of ionization induced injection in a laser driven plasma wakefield show that high-quality electron injectors in the 50-200 MeV range can be achieved in a gas cell with a tailored density profile. Using the PIC code Warp with…
We investigate the electronic band structure of modulation-doped GaAs/AlGaAs core-shell nanowires for both n- and p-doping. We developed an 8-band Burt-Foreman k.p Hamiltonian approach to describe coupled conduction and valence bands in…
We report a systematic study of p-type polarization induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a…
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to…
Laser-triggered ionization injection is a promising way of generating controllable high-quality electrons in plasma-based acceleration. We show that ionization injection of electrons into a fully nonlinear plasma wave wake using a laser…
We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (PL) (p$^+$PL-PL-GL heterostructure). Due…
Efficient electroluminescence of silicon light emitting p-n diodes with different sizes and shapes is investigated at room temperature. High quantum efficiency of the diodes, a long linear dependence of the electroluminescence intensity on…
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum…
With a seminal work of Raghu and Haldane in 2008, concepts of topology have been successfully introduced in a wide range of optical systems, emulating specific lattice Hamiltonians. Certainly, one of the most promising routes to an…
Hybrid lead halide perovskites with 2D stacking structures have recently emerged as promising materials for optoelectronic applications. We report a method for growing 2D nanosheets of hybrid lead halide perovskites (I, Br and Cl), with…
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance…
We present an experimental observation of non-linear up- and down-converted optical luminescence of graphene and thin graphite subject to picosecond infrared laser pulses. We show that the excitation yields to a high density electron-hole…
We perform self-consistent Schr\"odinger-Poisson calculations with exchange and correlation corrections to determine the electron/hole gas in a radial hetero-junction formed in a modulation doped GaAs/AlGaAs core-multi-shell nanowire (CSNW)…
We present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2…
Detailed two dimensional particle-in-cell (PIC) simulations and numerical calculations of electron density profiles, based on a simplified model, were performed to show for the first time that underdense plasma, induced by two pairs of…
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure…
The formation of an electron-hole plasma during the interaction of intense femtosecond laser pulses with transparent solids lies at the heart of femtosecond laser processing. Advanced micro- and nanomachining applications require improved…