Related papers: Laterally-doped heterostructures for III-N lasing …
We proposed and realized a two-dimensional (2D) photonic bandedge laser surrounded by the photonic bandgap. The heterogeneous photonic crystal structure consists of two triangular lattices of the same lattice constant with different air…
We suggest to use InAs/GaSb coupled quantum wells for THz lasing. In these heterostructures THz lasing is based not on intersubband but on interband transitions. Crucial advantages of this design in comparison with intersubband lasers are…
The recent observation of superconductivity in infinite-layer Nd$_{1-x}$Sr$_x$NiO$_2$ thin films has attracted a lot of attention, since this compound is electronically and structurally analogous to the superconducting cuprates. Due to the…
We present a colloidal synthesis strategy for lead halide nanosheets with a thickness of far below 100 nm. Due to the layered structure and the synthesis parameters the crystals of PbI2 are initially composed of many polytypes. We propose a…
Two-dimensional (2D) laser arrays are shown to be achievable at a large scale by exploiting the interplay of higher-order topological insulator (HOTI) physics and the so-called non-Hermitian skin effect (NHSE). The higher-order topology…
We investigate photoluminescence from a high-density electron-hole plasma in semiconductor quantum wells created via intense femtosecond excitation in a strong perpendicular magnetic field, a fully-quantized and tunable system. At a…
Reaching lasing in electrically pumped microdevices based on solution-processed semiconductors poses a major scientific and technological challenge. Halide perovskites offer a promising platform for electrical injection, since their…
The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor…
The energy and photoluminescence (PL) spectra of a two-dimensional electron gas (2DEG) interacting with a valence-band hole are studied in the high-magnetic-field limit as a function of the filling factor nu and the separation $d$ between…
Creation of electrons and positrons from light alone is a basic prediction of quantum electrodynamics, but yet to be observed. Here we show that it is possible to create ${>}10^8$ positrons by dual laser irradiation of a structured plasma…
The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light emitting semiconductor quantum well heterostructures point in a direction opposite to…
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped…
We theoretically investigate Sn(II) phosphates as optoelectronic materials using first principles calculations. We focus on known prototype materials Sn$_n$P$_2$O$_{5+n}$ (n=2, 3, 4, 5) and a previously unreported compound, SnP$_2$O$_6$…
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By…
We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried…
We report on the first detailed analysis of large three dimensional (3D) complex plasma structures in experiments performed in pure rf and combined rf+dc discharge modes. Inductively coupled plasma (ICP) is generated by an rf coil wrapped…
It should be possible to improve hot-hole laser performance by moving from bulk materials to a quantum well structure. The extra design parameters enable us to alter the band structure by changing the crystal orientation of the growth…
For a collisionless plasma in contact with a dielectric surface, where with unit probability electrons and ions are, respectively, absorbed and neutralized, thereby injecting electrons and holes into the conduction and valence band, we…
Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs) are deposited onto intrinsic Si and laser processed using an 807.5nm cw-laser. During…
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very…