Related papers: Laterally-doped heterostructures for III-N lasing …
Since the advent of atom laser-cooling, trapping or cooling natural molecules has been a long standing and challenging goal. Here, we demonstrate a method for laser-trapping molecules that is radically novel in its configuration, in its…
Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically…
We consider an electron-hole bilayer in the limit of extreme density imbalance, where we have a single particle in one layer interacting attractively with a Fermi liquid in the other parallel layer. Using an appropriate variational wave…
Electron-hole systems on a Haldane sphere are studied by exact numerical diagonalization. Low lying states contain one or more types of bound charged excitonic complexes Xk-, interacting through appropriate pseudopotentials. Incompressible…
A two-dimensional (2D) solid-state random laser emitting in the visible is demonstrated, in which optical feedback is provided by a controlled disordered arrangement of air-holes in a dye-doped polymer film. We find an optimal scatterer…
Inversion- and depletion-regions generally form at the interfaces between doped leads (cladding layers) and the active region of polar heterostructures like AlN/GaN and other nitride compounds. The band bending in the depletion region sets…
The possibility of the formation of an electron-hole liquid in the type II heterostructures based on monolayers (bilayers) of transition metal dichalcogenides is considered. It is indicated that additional valleys in the conduction band,…
In this work, we calculate material gain for long wavelength III-nitride InN and AlInN quantum dot (QD) structures. Strain and QD inhomogeneity are included in the calculations. The study covers (800-2300 nm) wavelength range which is…
We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a…
In simulations of a 10PW laser striking a solid we demonstrate the possibility of producing a pure electron-positron plasma by the same processes as those thought to operate in high-energy astrophysical environments. A maximum positron…
We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high…
A surface distribution of the electroluminescence intensity of silicon p-n light emitting diodes is obtained under space scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting…
We present a theoretical study of atomic laser-assisted photoionization emission (LAPE) beyond the dipole approximation. By considering the non-relativistic non-dipole strong-field approximation (non-dipole Gordon-Volkov wave function), we…
Layered oxide heterostructures are the new routes to tailor desired electronic and magnetic phases emerging from competing interactions involving strong correlation, orbital hopping, tunnelling and lattice coupling phenomena. Here, we…
N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with…
We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to…
Separately contacted double layers of a 2d electron - 2d hole gases have been prepared in GaAs separated by thin AlGaAs barriers with thicknesses down to 15 nm. The molecular-beam-epitaxial growth was interrupted just before the barrier in…
We present a polarization resolved study of the low energy band structure in the optimally doped iron pnictide superconductor Ba$_{0.6}$K$_{0.4}$Fe$_2$As$_2$ (T$_c$=37K) using angle resolved photoemission spectroscopy.…
Mechanical properties, atomic and energy band structures of bare and hydrogen passivated Si$_{n}$Ge$_{n}$ nanowire superlattices have been investigated by using first-principles pseudopotential plane wave method. Undoped, tetrahedral Si and…
Taking advantage of the large electron escape depth of soft x-ray angle resolved photoemission spectroscopy we report electronic structure measurements of (111)-oriented [LaNiO3/LaMnO3] superlattices and LaNiO3 epitaxial films. For thin…