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The substitution of Mn in the III-V diluted magnetic semiconductors leads to a strong electron scattering on impurities. Besides the features induced in the valence band by the hybridization with the Mn d-states, also the conduction band is…

Materials Science · Physics 2007-05-23 J. Masek , F. Maca

Boron-doped diamond crystals (BDD, C$_{1-x}$B$_{x}$) exhibit exceptional mechanical strength, electronic tunability, and resistance to radiation damage. This makes them promising materials for use in gamma-ray crystal-based light sources.…

Recently, new quantum features have been observed and studied in the area of nanostructured layers. Nanograting on the surface of the thin layer imposes additional boundary conditions on the electron wave function and induces G-doping or…

Mesoscale and Nanoscale Physics · Physics 2014-02-25 A. Tavkhelidze

Superconductivity in an uncompensated boron doped diamond, a very recent observation, is strikingly close to an earlier observation of Anderson-Mott insulator to metal transition, prompting us to suggest an electron correlation driven…

Strongly Correlated Electrons · Physics 2007-05-23 G. Baskaran

Homoepitaxial diamond layers doped with boron in the 10^20-10^21 /cm3 range are shown to be type II superconductors with sharp transitions (~0.2K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration…

The p-n diodes represent the most fundamental device building block for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the inability to selectively dope them…

Mesoscale and Nanoscale Physics · Physics 2014-09-17 Rui Cheng , Dehui Li , Hailong Zhou , Chen Wang , Anxiang Yin , Shan Jiang , Yuan Liu , Yu Chen , Yu Huang , Xiangfeng Duan

BaTiO3 is typically a strong n-type material with tuneable optoelectronic properties via doping and controlling the synthesis conditions. It has a wide band gap that can only harness the ultraviolet region of the solar spectrum. Despite…

We calculate the density of states (DOS) and the Mulliken population of the diamond and the co-doped diamonds with different concentrations of lithium (Li) and phosphorus (P) by the method of the density functional theory, and analyze the…

Materials Science · Physics 2013-03-25 Q. Y. Shao , G. W. Wang , J. Zhang , K. G. Zhu

Heavily-doped semiconductor nanocrystals characterized by a tunable plasmonic band have been gaining increasing attention recently. Herein, we introduce this type of materials focusing on their structural and photo physical properties.…

We investigate the possible occurrence of field-effect induced superconductivity in the hydrogenated $(111)$ diamond surface by first-principles calculations. By computing the band alignment between bulk diamond and the hydrogenated surface…

The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this…

Materials Science · Physics 2022-03-22 Maciej P Polak , Paweł Scharoch , Robert Kudrawiec

In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural…

We report a first principles systematic study of atomic, electronic, and magnetic properties of hydrogen saturated silicon nanowires (H-SiNW) which are doped by transition metal (TM) atoms placed at various interstitial sites. Our results…

Materials Science · Physics 2012-04-25 E. Durgun , D. I. Bilc , S. Ciraci , Ph. Ghosez

Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically…

This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…

Recent improvements in materials growth and fabrication techniques may finally allow for superconducting semiconductors to realize their potential. Here we build on a recent proposal to construct superconducting devices such as wires,…

Mesoscale and Nanoscale Physics · Physics 2015-04-13 Yun-Pil Shim , Charles Tahan

First-principles density functional simulations were employed to investigate the geometries, electrical properties, and hyperfine structures of various beryllium-doped diamond configurations, including interstitial (Be$_i$), substitutional…

Materials Science · Physics 2025-12-29 K. M. Etmimi , M. A. Ojalah , A. M. Abotruma

Superconductivity in few-layer semiconducting transition metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a…

Superconductivity · Physics 2024-09-24 Thibault Sohier , Marco Gibertini , Ivar Martin , Alberto F. Morpurgo

In this paper we propose a new paradigm to create superlenses inspired by n-p-n junctions of graphene. We show that by adjoining a n-type region and a p-type region with a crystal dislocation, it is possible to mimic the interaction of…

Optics · Physics 2022-03-15 Sylvain Lannebère , Mário G. Silveirinha

Benefitting from the excellent characteristics such as low cytotoxicity, functionalization versatility, and tunable fluorescence, nanodiamonds (NDs) have shown enormous application potentials in the biomedical field. Herein, we proposed,…