Related papers: Development of Integration-Type Silicon-On-Insulat…

To detect tracks of charged particles close to the interaction point in high energy physics experiments of the next generation colliders, hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the present…

The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…

We fabricated a readout ASIC with the fully depleted silicon-on-insulator (FD-SOI) technology for the pair-monitor. The pair-monitor is a silicon pixel device that measures the beam profile of the international linear collider. It utilizes…

After the successful installation and first operation of the upgraded Inner Tracking System (ITS2), which consists of about $10\,$m$^2$ of monolithic silicon pixel sensors, ALICE is pioneering the usage of bent, wafer-scale pixel sensors…

We report a detailed experimental and theoretical investigation of the effect of residual strain, and strain relaxation, which manifests itself at the Si/SiO$_{2}$ interfaces in commercial silicon-on-insulator (SOI) wafers. SOI material is…

A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…

High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great…

Silicon-on-insulator (SOI) enables for capability improvement of modern information processing systems by replacing some of their electrical counterparts. With the miniaturization of SOI platform, backscattering suppression is one of the…

The existing ATLAS Tracker will be at its functional limit for particle fluences of 10^15 neq/cm^2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities…

Strip and pixels sensors, fabricated on high resistivity silicon substrate, normally of p-type, are used in detectors for High Energy Physics (HEP) typically in a hybrid detector assembly. Furthermore, and owing to their inherent advantages…

We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new…

We demonstrate advanced integrated photonic filters in silicon-on-insulator (SOI) nanowires implemented by cascaded Sagnac loop reflector (CSLR) resonators. We investigate mode splitting in these standing-wave (SW) resonators and…

Hybrid pixel detectors require a reliable and cost-effective interconnect technology adapted to the pitch and die sizes of the respective applications. During the ASIC and sensor R&D phase, and in general for small-scale applications, such…

We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating…

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…

Optical isolators and circulators are indispensable for photonic integrated circuits (PICs). Despite of significant progress in silicon-on-insulator (SOI) platforms, integrated optical isolators and circulators have been rarely reported on…

A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50…

A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch…

We propose SOI pixel circuits with a synchronized time memory cell (TMC) for time-of-flight stigmatic imaging mass spectrometry. The circuits simultaneously detect the position and the fine/coarse flight time of an ion for the MALDI-ToF…

This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…