Related papers: Development of Integration-Type Silicon-On-Insulat…
The FASER experiment at the LHC aims to detect new, long-lived fundamental particles. A tungsten-silicon (W-Si) preshower detector is being developed to enhance the experiment's ability to distinguish between closely spaced photon pairs…
The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addresses the challenges of porting an existing hybrid pixel…
We present the development of a single-photon detector and the connected read-out electronics. This `hybrid' detector is based on a vacuum tube, transmission photocathode, microchannel plate and a pixelated CMOS read-out anode encapsulating…
The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…
Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…
Silicon-on-chip (SOI) photonic circuit is the most promising platform for scalable quantum information technology for its low loss, small footprint, CMOS-compatible and telecom communications techniques compatible. Multiple multiplexed…
The physics aims at the proposed future high-energy linear $e^+e^-$ collider CLIC pose challenging demands on the performance of the detector system. In particular, the vertex and tracking detectors have to combine a spatial resolution of a…
This study demonstrates the feasibility of a novel fabrication technique for high spatial resolution CsI: Tl scintillation detectors tailored for single photon emission computed tomography (SPECT) systems. Building upon our previously…
Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in…
This work presents the design of BUSARD, an application specific integrated circuit (ASIC) for the detection of ionizing particles. The ASIC is a monolithic active pixel sensor which has been fabricated in a High-Voltage…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…
Strained layer superlattice (SLS) material system is a dynamic and relatively new material for infrared detection. Large format, small-pitch and low-cost focal plane arrays (FPAs) with more pixels are in demand for different applications.…
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…
The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging spectroscopy from below 1 keV to a few tens of keV with a good…
The hybrid pixel detectors used in the high energy physics experiments currently under construction use a three dimensional connection technique, the so-called bump bonding. As the pitch below 100um, required in these applications, cannot…
The integration of miniaturized optical spectrometers into mobile platforms will have an unprecedented impact on applications ranging from unmanned aerial vehicles (UAVs) to mobile phones. To address this demand, silicon photonics stands…
We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector…
Lensless on-chip microscopy has shown great potential for biomedical imaging due to its large-area and high-throughput imaging capabilities. By combining the pixel super-resolution (PSR) technique, it can improve the resolution beyond the…
The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and…
We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $\mu m$ long device.…