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Complex-field imaging is indispensable for numerous applications at wavelengths from X-ray to THz, with amplitude describing transmittance (or reflectivity) and phase revealing intrinsic structure of the target object. Coherent diffraction…

Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…

Semi monolithic detector designs with a series of stacked thin monolithic scintillator plates and side readout are an attractive approach for potentially achieving very high performance in a positron emission tomography (PET) scanner. In…

CLIC is a proposed linear $e^+e^-$ collider with center-of-mass energies of up to 3 TeV. Its main objectives are precise top quark, Higgs boson and Beyond Standard Model physics. In addition to spatial resolutions of a few micrometers and a…

A detector concept based on hybrid planar pixel-detector technology is under development for the CLIC vertex detector. It comprises fast, low-power and small-pitch readout ASICs implemented in 65 nm CMOS technology (CLICpix) coupled to…

Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected…

An R&D program on monolithic CMOS pixel sensors for application at the ILC has been started at LBNL. This program profits of significant synergies with other R&D activities on CMOS pixel sensors. The project activities after the first…

An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active…

We discuss a new class of Micro Pattern Gas Detectors, the Gas Pixel Detector (GPD), in which a complete integration between the gas amplification structure and the read-out electronics has been reached. An Application-Specific Integrated…

Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…

We propose a scheme for infrared single-photon detection based on two-photon absorption at room-temperature in Si avalanche photodiodes, where the detected photon's energy is lower than the bandgap and the energy difference is complemented…

The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…

A tightly focused pulsed laser can locally modify the crystal structure inside the bulk of a scintillator. The result is incorporation of so-called optical barriers with a refractive index (RI) different from that of the crystal bulk, that…

Detectors at future high energy colliders will face enormous technical challenges. Disentangling the unprecedented numbers of particles expected in each event will require highly granular silicon pixel detectors with billions of readout…

The ePIC collaboration is developing a multidetector system to explore the fundamental properties of the strong interaction at the future Electron-Ion Collider (EIC), to be built at Brookhaven National Laboratory. A key component of the…

Single Pixel Imaging is an emerging imaging technique that employs a bucket detector (photodiode) to sample a spatially modulated light field, rather than measuring the spatial distribution with an array of detectors. This approach provides…

We present a novel single-photon detector based on a vacuum tube incorporating a photocathode, a microchannel plate (MCP), and a Timepix4 CMOS ASIC functioning as a pixelated anode. Designed to handle photon rates up to 1 billion per second…

In this work, a refractive index (RI) sensor with an effective integration of colorimetric detection and optical sensing capabilities has been developed. Colorimetric detection relies on the sensitivity of the structural color of photonic…

To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing…

In the construction of High-Luminosity Large Hadron Collider (HL-LHC) and Future Circular Collider (FCC) experiments, 3D pixel sensors have become indispensable components due to their superior radiation hardness, fast response, and low…