Related papers: Development of Integration-Type Silicon-On-Insulat…

This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and…

This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration…

This study proposes a simulation-based design for a Silicon-On-Insulator (SOI) ring resonator with a Figure of Merit (FOM) of 56.15 and a high sensitivity of up to 730 nm/RIU. The Finite-Difference Time-Domain (FDTD) technique was used to…

This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited…

Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such…

FORCE is a Japan-US space-based astronomy mission for an X-ray imaging spectroscopy in an energy range of 1--80 keV. The Wideband Hybrid X-ray Imager (WHXI), which is the main focal plane detector, will use a hybrid semiconductor imager…

Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, due to its…

The Pixel 2010 conference focused on semiconductor pixel detectors for particle tracking/vertexing as well as for imaging, in particular for synchrotron light sources and XFELs. The big LHC hybrid pixel detectors have impressively started…

Semiconductor pixel detectors offer features for the detection of radiation which are interesting for particle physics detectors as well as for imaging e.g. in biomedical applications (radiography, autoradiography, protein crystallography)…

Pixel Detectors, as the current technology of choice for the innermost vertex detection, have reached a stage at which large detectors have been built for the LHC experiments and a new era of developments, both for hybrid and for monolithic…

A prototype of the CMOS pixel sensor named SUPIX-1 has been fabricated and tested in order to investigate the feasibility of a pixelated tracker for a proposed Higgs factory, namely, the Circular Electron-Positron Collider (CEPC). The…

For the Inner Tracking System 3 (ITS3) upgrade, the ALICE experiment at CERN requires monolithic active pixel sensors of dimensions up to 97~mm$\,\times\,$266~mm, occupying a large fraction of a 300 mm wafer. To manufacture such a…

Dense tracking environments in experiments at CERN's High-Luminosity LHC and future FCC experiments call for an increased use of timing information in addition to the position measurement of pixel detectors. This adds one dimension to the…

Ultra-sensitive short-wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS-compatible silicon technological platform has been challenging due to…

The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor featuring pixels of 30um x 37.5um and a small collection diode. The sensor is fabricated in a 180 nm CMOS imaging process, using two different pixel flavours: the first with a…

Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…

In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron…

The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform…

This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…

We have been developing monolithic active pixel sensors series, named "XRPIX," based on the silicon-on-insulator (SOI) pixel technology, for future X-ray astronomical satellites. The XRPIX series offers high coincidence time resolution…