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Related papers: Multiphase strontium molybdate thin films for plas…

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We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm…

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing…

Structural study of orbital-ordered manganite thin films has been conducted using synchrotron radiation, and a ground state electronic phase diagram is made. The lattice parameters of four manganite thin films, Nd0.5Sr0.5MnO3 (NSMO) or…

Strongly Correlated Electrons · Physics 2011-03-08 Y. Wakabayashi , D. Bizen , Y. Kubo , H. Nakao , Y. Murakami , M. Nakamura , Y. Ogimoto , K. Miyano , H. Sawa

We have studied the magnetic-field-induced melting of the charge order in thin films of Pr0.5Ca0.5MnO3 (PCMO) films on SrTiO3 (STO) by X-ray diffraction, magnetization and transport measurement. At small thickness (25 nm) the films are…

Materials Science · Physics 2009-11-07 Z. Q. Yang , R. W. A. Hendrikx , P. J. M. v. Bentum , J. Aarts

Room-temperature 1535-nm-band photoluminescence in ~126 nm silica films (6 at. % doping), produced by spin-coating an Er2O3 and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace…

Materials Science · Physics 2012-02-06 Sufian Abedrabbo , Bashar Lahlouh , Anthony Fiory

Thin films of Ti1-xCoxO2 (x=0 and 0.03) have been prepared on sapphire substrates by spin-on technique starting from metalorganic precursors. When heat treated in air at 550 and 700 C respectively, these films present pure anatase and…

Materials Science · Physics 2009-11-10 R. Suryanarayanan , Vaman Naik , Parasuram Kharel , Punya Talgala , Ratna Naik

Thin films of TbMnO3 have been grown on SrTiO3 substrates. The films grow under compressive strain and are only partially clamped to the substrate. This produces remarkable changes in the magnetic properties and, unlike the bulk material,…

Materials Science · Physics 2009-11-13 D. Rubi , C. de Graaf , C. J. M. Daumont , D. Mannix , R. Broer , B. Noheda

NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) from 30 to 1100 C, we track the structural evolution of NiO…

Materials Science · Physics 2025-12-16 Hunter Ellis , Bobby G. Duersch , Botong Li , Imteaz Rahaman , Jim Pierce , Michael A. Scarpulla , Kai Fu

Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn…

We systematically investigated the physical properties of amorphous Mo$_{\rm x}$Si$_{1-x}$ films deposited by the magnetron co-sputtering technique. The critical temperature $T_C$ of Mo$_{\rm x}$ Si$_{1-x}$ films increases gradually with…

Superconductivity · Physics 2021-09-03 Xiaofu Zhang , Ilya Charaev , Huanlong Liu , Tony X. Zhou , Dong Zhu , Karl K. Berggren , Andreas Schilling

Magnetotransport properties of La0.7Ca0.3MnO3 thin films deposited on (100) LaAlO3 substrate were investigated. The balance between the charge ordered insulating phase and ferromagnetic metallic phase may account for a number of glassy…

Strongly Correlated Electrons · Physics 2009-11-11 V Markovich , E. S. Vlakhov , Y. Yuzhelevskii , B. Blagoev , K. A. Nenkov , G. Gorodetsky

Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…

Strongly Correlated Electrons · Physics 2016-09-21 Tobias Peterseim , Martin Dressel , Marc Dietrich , Angelika Polity

Nanocrystals of indium oxide (In$_2$O$_3$) with sizes below 10 nm were prepared in alumina matrixes by using a co-pulverization method. The used substrates such as borosilicate glasses or (100) silicon as well as the substrate temperatures…

We report the observation that thermoelectric thin-films of La-doped SrTiO3 grown on SrTiO3 substrates yield anomalously high values of thermopower to give extraordinary values of power factor at 300K. Thin-films of Sr0.98La0.02TiO3, grown…

YMnO3 thin films were grown on n - type Si substrate by nebulized spray pyrolysis in Metal - Ferroelectric - Semiconductor (MFS) configuration. The C-V characteristics of the film in MFS structure exhibit hysteretic behavior consistent with…

Materials Science · Physics 2009-11-10 Sachin Parashar , A. R. Raju , C. N. R. Rao , P. Victor , S. B. Krupanidhi

The copper ferrite thin films have been deposited by RF sputtering at a 50W rf power. The As-deposited films are annealed in air at $800^{\circ}$C and then slow cooled. The As-deposited (AD) as well as slow cooled (SC) films are studied…

Strongly Correlated Electrons · Physics 2010-10-12 P. D. Kulkarni , Shiva Prasad , N. Venkataramani , R. Krishnan , Wenjie Pang , Ayon Guha , R. C. Woodward , R. L. Stamps

We have studied the effect of annealing temperature on the statistical properties of $WO_3$ surface using atomic force microscopy techniques (AFM). We have applied both level crossing and structure function methods. Level crossing analysis…

Data Analysis, Statistics and Probability · Physics 2007-05-23 G. R. Jafari , A. A. Saberi , R. Azimirad , A. Z. Moshfegh , S. Rouhani

We report on the magnetic properties of zinc ferrite thin film deposited on SrTiO$_3$ single crystal using pulsed laser deposition. X-ray diffraction result indicates the highly oriented single phase growth of the film along with the…

Materials Science · Physics 2017-02-21 Yogesh Kumar , Israel Lorite , Michael Lorenz , Pablo D. Esquinazi , Marius Grundmann

Ta (100 nm) / NdFeB (5 $\mu$m) / Ta (100 nm) films have been deposited onto Si substrates using triode sputtering (deposition rate ~ 18 $\mu$m/h). A 2-step procedure was used : deposition at temperatures up to 400 C followed by ex-situ…

Materials Science · Physics 2009-11-13 Arnaud Walther , Kirill Khlopkov , Oliver Gutfleisch , Dominique Givord , Nora M. Dempsey

Thin films of Ti1-xFexO2 (x=0 and 0.05) have been prepared on sapphire substrates by spin-on technique starting from metal organic precursors. When heat treated in air at 550 and 700 degrees C respectively, these films present pure anatase…

Materials Science · Physics 2009-11-10 R. Suryanarayanan , V. M. Naik , P. Kharel , P. Talgala , R. Naik