Related papers: III-V Tri-Gate Quantum Well MOSFET: Quantum Ballis…
Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFETs by quantum transport simulations. It is found that for an…
An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using…
We present a comprehensive analysis of quantum circuit fidelity across the full compilation stack, from high-level gate optimization through pulse-level control. Using a modular integration framework connecting a C++ circuit optimizer with…
Motivated by recent experimental findings, we study transport in a simple phenomenological model of a quantum Hall edge system with a gate-voltage controlled constriction lowering the local filling factor. The current backscattered from the…
We study electron transport through a triple quantum dot in ring configuration at finite bias. In particular, we analyze the influence of a gate voltage that detunes one of the dots, such that one branch of the interferometer becomes…
Variational quantum algorithms (VQAs) offer the most promising path to obtaining quantum advantages via noisy intermediate-scale quantum (NISQ) processors. Such systems leverage classical optimization to tune the parameters of a…
The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with…
Maintaining or even improving gate performance with growing numbers of parallel controlled qubits is a vital requirement for fault-tolerant quantum computing. For superconducting quantum processors, though isolated one- or two-qubit gates…
The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems…
Increasing quantum circuit fidelity requires an efficient instruction set to avoid errors from decoherence. The choice of a two-qubit (2Q) hardware basis gate depends on a quantum modulator's native Hamiltonian interactions and applied…
This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s*…
Air entrapment during mold filling critically affects porosity and overall casting quality in High Pressure Die Casting. This study assesses the feasibility of applying the vof method within OpenFOAM to simulate compressible, turbulent mold…
We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic quantum transport simulations with an atomistic tight-binding Hamiltonian…
Quantum computing holds potential for accelerating the simulation of fluid dynamics. However, hardware noise in the noisy intermediate-scale quantum era significantly distorts simulation accuracy. Although error magnitudes are frequently…
In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating…
High fidelity single and multi-qubit operations compose the backbone of quantum information processing. This fidelity is based on the ability to couple single- or two-qubit levels in an extremely coherent and precise manner. A necessary…
Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise…